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3.2. Self-summary

3.2.1. Summary-lead, examples

•  The classical Hall effect presents a surprisingly unusual and challenging
problem in electrostatics, with boundary conditions that are not of Dirichlet,
Neumann, or of mixed Dirichlet and Neumann type. These unusual boundary
conditions create several difficulties not normally encountered in standard
problems, and ultimately lead to expansion of the electronic potential in a
nonorthogonal basis set. We derive the boundary conditions for the potential in a
rectangular geometry, construct a solution for a potential, and discuss the
relation between this problem and problems of the standard mixed type. We also
address a commonly encountered misconception about the current distribution.
[James Evans et al. Electronic potential in the classical Hall effect: An unusual
boundary value problem //American Journal of Physics, 1998, N. 8.J
•  Recent experimental results concerning the surface-related electronic structure of
care-earth solids are presented. Special attention is paid to the occurrence of
surface-valence transit ons in bivalent or mixed-valent compounds of Sm, Eu,
Tm, and Gb that are due to energetically lowering of unoccupied 4f-states
caused by reduced atomic coordination at the surface. Similar phenomena are
encountered in Ce-systems leading to a decrease of 4f-hybridization in the
outermost atomic surface layer. The importance of this phenomenon for the
correct interpretation of electron-spectroscopic data of Ce-systems is discussed.
Experimental evidence for transitions from a localized to an itinerant behavior of
the 4f-states is obtained for CeRh3. [C. Laubschat. Electron properties and
surface effects of care-earth systems// Applied Physics, 1997, N. 65.]
•  GENESYS, a hierarchical tool for exploring future ASIC technology and
architecture, is described and employed to project high-performance ASIC
power drain and clock frequency, a roadmap for interconnect design, and
performance, energy, and area limits. [Wills, D. Scott, et al. Generic system
simulator (GENESYS) for ASIC technology and architecture beyond 2001//
Proceedings of the 1996 9th Annual IEEE International ASIC Conference and
Exhibit. Rochester, NY, USA.].
•  For a prescribed system performance, device, circuit and system design of a
static CMOS datapath are conjointly optimized for different operating
temperature ranges. Total power dissipation is reduced to one-third the value
projected for 0.25 micron CMOS by the National Technology Roadmap for
Semiconductors for a single datapath and to less than one-fourteenth the value
projected for parallel datapaths assuming operation over a temperature range of
60 degree K above room temperature. [Meindl, James et al. Optimal circuit
design for low power CMOS GS1// Proceedings of the 1996 9th Annual IEEE
International ASIC Conference and Exhibit. Rochester, NY, USA.].

3.2.2. Summary-abstract, examples

•  Previous studies showed that the increase in the adsorptive capacity of activated
carbon for phenolic compounds can be attributed to polymerization of these
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